供应原装H5TQ2G63GFR-TEC DDR3 SDRAM

原装H5TQ2G63GFR-TEC DDR3 SDRAM 的技术参数：

脚位/封装 FBGA-96

外包装 TRAY

无铅/环保 无铅/环保

电压(伏) 1.5 V

温度规格 0°C~+95°C

速度 2133 MHZ

标准包装数量 160

Number Of Words 128M

Bit Organization x16

Density 2G

Operating Temperature commercial temperature(0°C~85°C) & normal power

Package Material lead & halogen free(ROHS compliant)

Hynix Memory H

Die Generation 8th

No Of Banks 8 banks

Product Family DRAM

Shipping Method tray

原装H5TQ2G63GFR-TEC DDR3 SDRAM的描述：

The H5TQ2G83GFR-xxC, H5TQ2G63GFR-xxC,H5TQ2G83GFR-xxI, H5TQ2G63GFR-xxI, H5TQ2G83GFRxxL,H5TQ2G63GFR-xxL,H5TQ2G83GFR-xxJ,H5TQ2G63GFR-xxJ are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.