供应W25Q64FVSSIG NAND FLASH 原装

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W25Q64FVSSIG NAND FKASH 原装

IC FLASH 64MBIT SPI/QUAD 8SOIC

FLASH - NOR 存储器 IC 64Mb8M x 8SPI - I/OQPI 104 MHz 8-SOIC


W25Q64FVSSIG NAND FKASH 原装的描述:

The W25Q64FV (64M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power.

The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices.

They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data.

The device operates on a single 2.7V to 3.6V power supply with current consumption as low as 4mA active and 1μA for power-down. All devices are offered in space-saving packages.

The W25Q64FV array is organized into 32,768 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time.

Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase).

The W25Q64FV has 2,048 erasable sectors and 128 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage.

The W25Q64FV support the standard Serial Peripheral Interface (SPI), Dual/Quad I/O SPI as well as 2- clocks instruction cycle Quad Peripheral Interface (QPI): Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD).

SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O and QPI instructions.

These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true XIP (execute in place) operation.

 

W25Q64FVSSIG NAND FKASH 原装的技术参数

类别

存储器

制造商

Winbond Electronics

系列

SpiFlash®

包装

管件

存储器类型

非易失

存储器格式

闪存

技术

FLASH - NOR

存储容量

64Mb8M x 8

存储器接口

SPI - I/OQPI

时钟频率

104 MHz

写周期时间 - 字,页

50μs3ms

电压 - 供电

2.7V ~ 3.6V

工作温度

-40°C ~ 85°CTA

RoHS 状态

符合 ROHS3 规范

湿气敏感性等级 (MSL)

3168 小时)

REACH 状态

REACH 产品

ECCN

3A991B1A

HTSUS

8542.32.0071

安装类型

表面贴装型

封装/外壳

8-SOIC0.209"5.30mm 宽)

 

 


 

型号

W25Q64FVSSIG

制造商

Winbond

封装

SOIC

批次

21+/22+

无铅/环保

无铅/环保