原装K4E6E304ED-EGCG同步动态随机存储器

原装K4E6E304ED-EGCG同步动态随机存储器

三代低功耗双倍数据率同步动态随机存储器K4E6E304ED-EGCG

16Gb DDP LPDDR3 SDRAM 178FBGA, 11x11.5 512M x32 (32M x32 x 8banks)

容量16 Gb

架构x32

速率2133 Mbps

工作电压1.8 / 1.2 / 1.2 V

工作温度-25 ~ 85 °C

封装178FBGA

KEY FEATURE

• Double-data rate architecture; two data transfers per clock cycle

• Bidirectional data strobes (DQS_t, DQS_c), These are transmitted/received with data to be used in capturing data at the receiver

• Differential clock inputs (CK_t and CK_c)

• Differential data strobes (DQS_t and DQS_c)

• Commands & addresses entered on both positive and negative CK edges; data and data mask referenced to both edges of DQS

• 8 internal banks for concurrent operation

• Data mask (DM) for write data

• Burst Length: 8

• Burst Type: Sequential

• Read & Write latency : Refer to Table 46 LPDDR3 AC Timing Table

• Auto Precharge option for each burst access

• Configurable Drive Strength

• All Bank Refresh, Per Bank Refresh and Self Refresh

• Partial Array Self Refresh and Temperature Compensated Self Refresh

• Write Leveling

• CA Calibration

• HSUL_12 compatible inputs

• VDD1/VDD2/VDDQ/VDDCA

: 1.8V/1.2V/1.2V / 1.2V

• No DLL : CK to DQS is not synchronized

• Edge aligned data output, center aligned data input

• Operating Temperature : -25 ~ 85°C

• On Die Termination using ODT pin

• 2/CS, 2CKE