原装NT5CC64M16GP-DI DDR3(L) 1Gb SDRAM

原装NT5CC64M16GP-DI  DDR3(L) 1Gb SDRAM

NT5CC64M16GP-DI  Commercial  Industrial and Automotive DDR3(L) 1Gb SDRAM

NT5CC64M16GP-DI  DRAM Chip DDR3L SDRAM 1Gbit 64Mx16 1.35V 96-Pin VFBGA

NT5CC64M16GP-DI 的技术参数：

EU RoHS ： Compliant ：

ECCN (US) ： EAR99

芯片密度（位） ： 1G

组织 ： 64Mx16

位数/Word（位） ： 16

数据总线宽度（位） ： 16

max时钟速率(MHz) ： 800

输入/输出线数（位） ： 8

供应商包 ： VFBGA

针脚数 ： 96

描述：

The 1Gb Double-Data-Rate-3 (DDR3(L)) G-die DRAMs is double data rate architecture to achieve high-speed  operation. It is internally configured as an eight bank DRAM.

The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/ pin/sec for general applications.

The chip is designed to comply with all key DDR3(L) DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion.

These devices operate with a single 1.5V ± 0.075V or 1.35V -0.067/+0.1V power supply and are available in BGA packages.