闪存KLM4G1FETE-B041 eMMC 4GB

闪存KLM4G1FETE-B041 eMMC 4GB 的技术参数：

脚位/封装 - FBGA

外包装 - TRAY

无铅/环保 - 无铅/环保

标准包装数量 - 1120

类型 - 存储器

针脚数 - 153

应用领域 - 智能家居

存储容量 - 4GB

用途 - 电脑

封装 - BGA153

特色服务 - 全新原装

功率 - 1.8w

脚位/封装 - FBGA-153

外包装 - TRAY

无铅/环保 - 无铅/环保

电压(伏) - 3.3 V

温度规格 - -25°C~+85°C

速度 - 52MHz

闪存KLM4G1FETE-B041 eMMC 嵌入式多媒体卡

SAMSUNG eMMC is an embedded MMC solution designed in a BGA package form. eMMC operation is identical to a MMC device and therefore is a simple read and write to memory using MMC protocol v5.1 which is a industry standard.

eMMC consists of NAND flash and a MMC controller. 3V supply voltage is required for the NAND area (VDDF or VCC) whereas 1.8V or 3V dual supply

voltage (VDD or VCCQ) is supported for the MMC controller. SAMSUNG eMMC supports HS400 in order to improve sequential bandwidth, especially sequential read performance.

There are several advantages of using eMMC. It is easy to use as the MMC interface allows easy integration with any microprocessor with MMC host. Any revision or amendment of NAND is invisible to the host as the embedded MMC controller insulates NAND technology from the host. This leads to faster product development as well as faster times to market.

The embedded flash management software or FTL(Flash Transition Layer) of eMMC manages Wear Leveling, Bad Block Management and ECC. The FTL supports all features of the Samsung NAND flash and achieves optimal performance.

闪存KLM4G1FETE-B041

embedded MultiMediaCard Ver. 5.1 compatible.

·SAMSUNG eMMC supports features of eMMC5.1 which are defined in JEDEC Standard

- Major Supported Features : HS400, Field Firmware Update, Cache, Command Queuing, Enhanced Strobe Mode,

Secure Write Protection, Partition types.

- Non-supported Features : Large Sector Size (4KB)

·Backward compatibility with previous MultiMediaCard system specification (1bit data bus, multi-eMMC systems)

·Data bus width : 1bit (Default), 4bit and 8bit

·MMC I/F Clock Frequency : 0 ~ 200MHz

MMC I/F Boot Frequency : 0 ~ 52MHz

·Temperature : Operation (-25°C ~ 85°C), Storage without operation (-40°C ~ 85°C)

·Power : Interface power→VCCQ(1.70V ~ 1.95V or 2.7V ~ 3.6V) , Memory power→VCC (2.7V ~ 3.6V)