新洁能NCE65T540F MOSFET对P对电源开关的要求应用

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NCE65T540F

N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） VDS 650 V RDS(ON)TYP 460 mΩ ID 8 A Package Marking And Ordering Information Device Device Package Marking NCE65T540D TO-263 NCE65T540D NCE65T540 TO-220 NCE65T540 NCE65T540F TO-220F NCE65T540F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol NCE65T540D NCE65T540 NCE65T540F Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V) AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 8 8* A Continuous Drain Current at Tc=100°C ID (DC) 5.2 5.2* A Pulsed drain current (Note 1) IDM (pluse) 32 32* A Maximum Power Dissipation(Tc=25℃) Derate above 25°C PD 69 0.55 31.6 0.25 W W/°C Single pulse avalanche energy (Note 2) EAS 156 mJ Avalanche current(Note 1) IAR 1.7 A Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR 0.3 mJ