mosfet工厂,厂家生产40V-200V P|FNK5530PK

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-55

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

-30

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

-21

A

Pulsed Drain Current

IDM

110

A

Maximum Power Dissipation

PD

90

W

Derating factor

0.72

W/℃

Single pulse avalanche energy (Note 5)

EAS

420

mJ

Parameter

Symbol

Condition

Min

T*

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-55

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=-55V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-2

-3

-4

V

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-15A

-

30

40

mΩ

Forward Transconductance

gFS

VDS=-25V,ID=-16A

8

-

-

S

Dynamic Characteristics (Note4)