原装场效应二三*管系列 2SK2699 K2699

原装正品场效应二三*管系列 2SK2699  K2699

原装正品场效应二三*管系列 2SK2699  K2699

2SK2699  K2699产品规格  参数

Datasheets 2SK2699
Mosfets Prod Guide
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25° C 12A
Rds On (Max) @ Id, Vgs 650 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 58nC @ 10V
Input Capacitance (Ciss) @ Vds 2600pF @ 10V
Power - Max 150W
Mounting T*e Through Hole
Package / Case TO-*-3, SC-65-3
Supplier Device Package TO-*(N)
Packaging Tube