【IR优势供应场效应管系列】IRFB31N20DPBF FB31N20D

【IR优势供应场效应管系列】IRFB31N20DPBF  FB31N20D

【IR优势供应场效应管系列】IRFB31N20DPBF  FB31N20D

IRFB31N20DPBF  FB31N20D产品规格  参数

Datasheets IRFB31N20DPbF, IRFS(L)31N20DPbF
Product Photos TO-220AB PKG
Catalog Drawings IR Hexfet TO-220AB
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series HEXFET®
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25° C 31A
Rds On (Max) @ Id, Vgs 82 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) @ Vgs 107nC @ 10V
Input Capacitance (Ciss) @ Vds 2370pF @ 25V
Power - Max 3.1W
Mounting T*e Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Packaging Tube
Catalog Page 1297 (US2011 Interactive)
1297 (US2011 PDF)
Other Names *IRFB31N20DPBF