TOSHIBA东芝**原装场效应管系列 2SK2604 K2604

TOSHIBA东芝**原装场效应管系列 2SK2604  K2604

TOSHIBA东芝**原装场效应管系列 2SK2604  K2604

2SK2604  K2604产品规格  参数

Datasheets 2SK2604
Mosfets Prod Guide
Standard Package 3,000
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25° C 5A
Rds On (Max) @ Id, Vgs 2.2 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 34nC @ 10V
Input Capacitance (Ciss) @ Vds 1080pF @ 25V
Power - Max 125W
Mounting T*e Through Hole
Package / Case TO-*-3, SC-65-3
Supplier Device Package TO-*(N)
Packaging Tape & Reel (TR)