东芝场效应管 K3569 2SK3569 日本产地 原装/散新

东芝场效应管 K3569  2SK3569  日本产地 原装/散新

东芝场效应管 K3569  2SK3569  日本产地 原装/散新

K3569  2SK3569产品规格  参数

Datasheets 2SK3569
Mosfets Prod Guide
Product Photos 2SK3569(Q)
Catalog Drawings TO-220SIS Side 3
TO-220SIS Side 2
TO-220SIS Side 1
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25° C 10A
Rds On (Max) @ Id, Vgs 750 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 42nC @ 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max 45W
Mounting T*e Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220SIS
Packaging Tube
Other Names 2SK3569(Q)
2SK3569Q
2SK3569Q-ND