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品牌:AO | 型号:AO4420 | 种类:*缘栅(MOSFET) |
沟道类型:N沟道 | 导电方式:增强型 | 用途:D-G双栅四* |
封装外形:SMD(SO)/表面封装 | 材料:GE-N-FET锗N沟道 | 开启电压:10(V) |
夹断电压:30(V) | 跨导:10(μS) | *间电容:4000(pF) |
低频噪声系数:20(dB) | *大漏*电流:200(mA) | *大耗散功率:100(mW) |
原装现货General Description
The AO4420 uses advanced trench technology to
provide excellent R DS(ON),
shoot-through immunity and
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L
( Green Product ) is offered in a lead-free package.General Description
The AO4420 uses advanced trench technology to
provide excellent R DS(ON),
shoot-through immunity and
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
AO4420L is offered in a lead-free package. AO4420L
( Green Product ) is offered in a lead-free package.Features
VDS (V) = 30V
ID = 13.7A
RDS(ON) < 10.5m? (VGS = 10V)
RDS(ON) < 12m? (VGS = 4.5V)