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品牌:AO | 型号:AO4422A | 种类:*缘栅(MOSFET) |
沟道类型:N沟道 | 导电方式:增强型 | 用途:S/开关 |
封装外形:SMD(SO)/表面封装 | 材料:GE-N-FET锗N沟道 | 开启电压:15(V) |
夹断电压:30(V) | 跨导:10(μS) | *间电容:1200(pF) |
低频噪声系数:100(dB) | *大漏*电流:45(mA) | *大耗散功率:100(mW) |
原装现货General Description
The AO4422A uses advanced trench technology to
provide excellent RDS(ON)
and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to b** the source inductance. Standard
Product AO4422A is Pb-free (meets ROHS & Sony
259 specifications). AO4422AL is a Green Product
ordering option. AO4422A and AO4422AL are
electrically identical.Features
VDS (V) = 30V
ID = 11A (VGS = 10V)
RDS(ON)
< 15m? (VGS = 10V)
RDS(ON) < 24m? (VGS = 4.5V)