MOS管 30V小功率场效应管 UT3418

1，以下为参考价。

N-CHANNEL ENHANCEMENT MODE FIELD EFFE* TRANSISTOR
D*CRIPTION
The UT3418 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
FEATUR*
* RDS(ON) < 60mΩ @VGS = 10 V
* RDS(ON) < 70mΩ @VGS = 4.5 V
* RDS(ON) < 155mΩ @VGS = 2.5 V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified