NCE代理,现货*场效应管 NCE8205 SOT-23-6

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Description                                                                           D 1                    D 2

The NCE8205 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate                     G 1              G 2

voltages as low as 2.5V. This device is suitable for use as a

Battery protection or in other Switching application.                                      S1               S 2

                                                                                      Schematic diagram

General Features

●  V   = 19.5V,I   = 4A
     DS         D

    RDS(ON) <37m? @ VGS=2.5V

    RDS(ON) < 27m? @ VGS=4.5V

●  High Power and current handing capability

●  Lead free product is acquired                                                 Marking and pin Assignment

●  Surface Mount Package

"
封装外形

SMD(SO)/表面封装

型号/规格

NCE8205

材料

N-FET硅N沟道

用途

TR/激励、驱动

品牌/商标

NCE

沟道类型

N沟道

种类

*缘栅(MOSFET)

导电方式

增强型