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Description D 1 D 2
The NCE8205 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate G 1 G 2
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application. S1 S 2
Schematic diagram
General Features
● V = 19.5V,I = 4A
DS D
RDS(ON) <37m? @ VGS=2.5V
RDS(ON) < 27m? @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired Marking and pin Assignment
● Surface Mount Package
"SMD(SO)/表面封装
NCE8205
N-FET硅N沟道
TR/激励、驱动
NCE
N沟道
*缘栅(MOSFET)
增强型