图文详情
产品属性
相关推荐
D*CRIPTION
The NCE3010S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATUR*
● V =30V,I =10A
RDS(ON) < 13.5m? @ VGS=10V
RDS(ON) < 20m? @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
"NCE(新洁能)
NCE3010S
*缘栅(MOSFET)
N沟道
增强型
S/开关
SMD(SO)/表面封装