供应BC847

Reverse Conducting IGBT with monolithic body diode
Features:
• 1.5V t*ical saturation voltage of IGBT
• Trench and Fields* technology for 900 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Application specific optimisation of inverse diode
• Pb-free lead plating; RoHS compliant
Applications:
• Microwave Oven
• Soft Switching Applications for ZCS