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品牌/商标 | TOSHIBA/长电 | 型号/规格 | 2SC2712 |
应用范围 | 放大 | 功率特性 | *率 |
频率特性 | 中频 | *性 | NPN型 |
结构 | 点接触型 | 材料 | 硅(Si) |
封装形式 | sot-23 | 封装材料 | 树脂封装 |
截止频率fT | 50(MHz) | 集电**大允许电流ICM | 100m(A) |
集电**大耗散功率PCM | 220m(W) |
*现货供应 三*管2SC2712
SHIBA Transistor Silicon NPN Epitaxial T*e (P* process)
2SC2712
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (t*.)
High hFE: hFE = 70~700
Low noise: NF = 1dB (t*.), 10dB (max)
Complementary to 2SA1162
Small package
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 150 mA
Base current IB 30 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg 55~125 °C