*童FQP6N80C、*童6N80、场效应管、MOS管、TO-220

FQP6N80C/FQPF6N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( t*ical 21 nC)
• Low Crss ( t*ical 8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability