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*,长期大量供应三*管S8050,ECB,TO-92,欢迎来电咨询。
ELE*RICAL CHARA*ERISTICS(Tamb=25℃unless otherwise specified)
Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
Collector-base breakdown voltage | V(BR)CBO | lc=-100μA,lE=0 | 40 |
|
| V |
Collector-emitter breakdown voltage | V(BR)CEO | lc=0.1 mA, lB=0 | 25 |
|
| V |
Emitter-base breakdown voltage | V(BR)EBO | lE=-100μA,lc=0 | 5 |
|
| V |
Collector cut-off current | lCBO | VCB=-40V, lB=0 |
|
| 0.1 | μA |
Collector cut-off current | lCEO | VCE=-20V, lB=0 |
|
| 0.1 | μA |
Emitter cut-off current | lEBO | VEB=-3V, lc=0 |
|
| 0.1 | μA |
DC current gain | hFE(1) | VCE=-1V,lc=50mA | 160 |
| 300 |
|
Collector-emitter saturation voltage | VCE(sat) | lc=-800mA,lB=80mA |
|
| 0.56 | V |
Base-emitter daturation voltage | VBE(sat) | lc=-500mA,lB=50mA |
|
| 1.2 | V |
Transition frequency | fr | VCE=-6V,lc=20mA f=30MHZ | 150 |
|
| MHZ |
CLASSIFICATION OF hFE(1)
Rank | B | C | D |
Range | 85-160 | 120-200 | 160-300 |
国产
S8050,ECB
放大
小功率
中频
NPN型
点接触型
硅(Si)
直插型
塑料封装
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