供应 场效应管 BSC042N03MSG，042N03MS,BSC042N03
地区：广东 深圳
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| 型 号：BSC042N03MSG | ||||
| 标 记: 042N03MS | ||||
| 类 型：场效应管 | ||||
| 通道极性: N通道 | ||||
| 封 装：QFN-8 5*6/PG-TDSON-8 | ||||
| 备 注：正品 | ||||
| Parameter | Symbol | Conditions | Value | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=1mA | 30 | V |
| Continuous drain current | ID | VGS=10V,TC=25℃ | 93 | A |
| Pulsed drain current | IDM | TC=25℃ | 372 | A |
| Avalanche energy, single pulse | EAS | ID=30A, RGS=25Ω | 40 | mJ |
| Gate source voltage | VGS | ±20 | V | |
| Power dissipation | Ptot | TC=25℃ | 57 | W |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | V |
| Drain-source on-state resistance | RDS(on) | VGS=10V, ID=30A | 4.2 | mΩ |
| Input capacitance | Ciss | VGS=0V,VDS=15V, f=1MHz | 3200 | PF |
| Transconductance | gfs | |VDS|>2|ID|RDS(on)max,ID=30A | 84 | S |
BSC042N03MSG,QFN-8 5*6/PG-TDSON-8,SMD/MOS,N场,30V,93A,0.0042Ω.
INFINEON（英飞凌）
QFN-8 5*6/PG-TDSON-8
无铅环保型
贴片式
5000/盘
