[52]台湾原厂 AO3409 MOS管晶圆片

AO3409 MOSFET WAFER（MOS管晶圆片）

● 30V P-T*e MOSFET

● Vgss=&plu*n;20V

● Vgs(th)=-2.5V Max.

● Wafer Diameter: 8" (&plu*n;0.1 inches)
● Wafer Thickness: 6mils (&plu*n;0.6 mils)
● Die Size: 840µm x 640µm (Including scribe line)
● Scribe Line: 60µm
● Metallization: Frontside: Al/Cu, Backside: Ti/Ni/Ag
● Metal Thickness: Frontside: 4µm, Backside: 1.4µm
● Gate Pad Size: 120µm x 120µm

● Id: -3.6A

● Rds(on)*≤60mΩ @Vgs=-10V

● Rds(on)*≤90mΩ @Vgs=-4.5V

※ C/P measured on wafer by probe card.

※Rds(on) depended on packaged t*e and amount of bonding wires.

● Packaged T*e: SOT23-3L, SOT23

封装外形

WAFER/裸芯片

型号/规格

Psk3409

材料

P-FET硅P沟道

用途

S/开关

品牌/商标

Pm

沟道类型

P沟道

种类

*缘栅(MOSFET)

导电方式

增强型

[52]供应台湾原厂 AO3409 MOS管晶圆片