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AO4407A MOSFET WAFER(MOS管晶圆片)
● -30V P-T*e MOSFET ● Vgss=&plu*n;20V ● Vgs(th)=-2.5V Max. ● Wafer Diameter: 8" (&plu*n;0.1 inches) ● Id: -12A ● Rds(on)*≤11mΩ @Vgs=-10V ● Rds(on)*≤20mΩ @Vgs=-4.5V ※ C/P measured on wafer by probe card. ※Rds(on) depended on packaged t*e and amount of bonding wires. ● Packaged T*e: SOP-8
● Wafer Thickness: 6mils (&plu*n;0.6 mils)
● Die Size: 2060µm x 1640µm (Including scribe line)
● Scribe Line: 60µm
● Metallization: Frontside: Al-Cu, Backside: Ti/Ni/Ag
● Metal Thickness: Frontside: 4µm, Backside: 1.4µm
● Gate Pad Size: 150µm x 150µm
WAFER/裸芯片
Pps4407A
P-FET硅P沟道
S/开关
Pm
P沟道
*缘栅(MOSFET)
增强型