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1N60, 2N60, 4N60, 7N60, 10N60 HVMOSFET WAFER
1N60
-N-T*e, 1A, 600V
-Rds(on) ≤ 9Ω @Vgs=10V
-Packaged T*e:TO-92, TO-251, TO-252, TO-220, TO-220F
2N60
-N-T*e, 2A, 600V
-Rds(on) ≤ 4.4Ω @Vgs=10V
-Packaged T*e: TO-251, TO-252, TO-220, TO-220F
4N60
-N-T*e, 4A, 600V
-Rds(on) ≤ 2.2Ω @Vgs=10V
-Packaged T*e: TO-251, TO-252, TO-220, TO-220F
7N60
-N-T*e, 7A, 600V
-Rds(on) ≤ 1.3Ω @Vgs=10V
-Packaged T*e: TO-220, TO-220F
10N60
-N-T*e, 10A, 600V
-Rds(on) ≤ 0.75Ω @Vgs=10V
-Packaged T*e: TO-220, TO-220F
Pm
1N60, 2N60, 4N60, 7N60, 10N60
*缘栅(MOSFET)
N沟道
增强型
WAFER/裸芯片
-(V)
-(V)
-(pF)
-(dB)
-(mA)
-(mW)