场效应管 TK80A08K3,K80A08K3

TK80A08K3,TOSHIBA,TO-220F,DIP/MOS,N场,75V,80A,0.0045Ω

TK80E06K3,TO-220,DIP/MOS,N场,60V ,80A,0.0085Ω
TK30A06J3A,TO-220F,DIP/MOS,N场,60V ,30A,0.026Ω

产品型号:TK80A08K3

封装:TO-220F

品牌：TOSHIBA/东芝

源漏*间雪崩电压V(br)dss(V):75

夹断电压VGS(V):&plu*n;20

*大漏*电流Id(A):80

源漏**大导通电阻rDS(on)(Ω):0.0045 @VGS = 10 V

开启电压VGS(TH)(V):4

功率PD(W):25

输入电容Ciss(PF):8200 t*.

通道*性:N沟道

低频跨导gFS(s)：200

单脉冲雪崩能量EAS(mJ):443

导通延迟时间Td(on)(ns):55 t*.

上升时间Tr(ns):30 t*.

关断延迟时间Td(off)(ns):33 t*.

下降时间Tf(ns):150 t*.

温度(℃): -55 ~150

描述:TK80A08K3 75V,80A N-沟道增强型场效应晶体管

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