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N-CHANNEL ENHANCEMENT
MODE FIELD EFFE*
TRANSISTOR
D*CRIPTION
2N7002 has been designed to minimize on-state
resistance while provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product
is particularly suited for low voltage, low current applications such
as *all servo motor control, power MOSFET gate drivers, and
other switching applications
FEATUR*
* High density cell design for low RDS(ON).
* Voltage controlled *all signal switch
* Rugged and reliable
* High saturation current capability
台湾Sipu/长电
2N7002
*缘栅(MOSFET)
N沟道
增强型
MOS-FBM/全桥组件
SMD(SO)/表面封装
N-FET硅N沟道