供应优质场效应管FDN335N/SP335N

 

General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
*ior switching performance.
Applications
• DC/DC converter
• Load switch
Features
• 1.7 A, 20 V. RDS(ON) = 0.07 W @ VGS = 4.5 V
    RDS(ON) = 0.100 W @ VGS = 2.5 V.
• Low gate charge (3.5nC t*ical).
• High performance trench technology for extremely
   low RDS(ON).
• High power and current handling capability.