* MOSFET 30V / 80A --E*06N03E TO-220 内阻6毫欧
地区:广东 深圳
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS 30V
RDSON (MAX.) 6mΩ
ID 80A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
1Pulse test : Pulse Width ? 300 ?sec, Duty Cycle ? 2%.
2Independent of operating temperature.
*ulse width limited by maximum junction temperature.
Ordering & Marking Information:
Device Name: E*06N03E for TO‐220
E*06N03E
EMC- 台湾杰力
N沟道
*缘栅(MOSFET)
增强型