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1、TO-251小插件封装。80PCS/管。
2、韩产*MOS管。
3、现货*供应。珠三角支持快递代收,*支持支付宝。
1 Amps, 600/650 Volts N-CHANNEL MOSFET
D*CRIPTION
The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWMmotor controls, high efficient DC to DC converters and bridge circuits.
FEATUR*
* RDS(ON)=11.5Ω@VGS= 10V.
* Ultra Low gate charge (t*ical 5.0nC)
* Low reverse transfer capacitance (CRSS = t*ical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SMD(SO)/表面封装
TSU1N60
SW-REG/开关电源
TSU1N60
N沟道
*缘栅(MOSFET)
增强型