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D*CRIPTION
The NCE5505S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATUR*
● V =-55V,I =-5A
DS D
RDS(ON) <80m? @ VGS=-10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
SMD(SO)/表面封装
NCE5505S
N-FET硅N沟道
L/功率放大
NCE
N沟道
*缘栅(MOSFET)
增强型