现货* NCE新洁能 NCE6075

D*CRIPTION
The NCE6075 uses advanced trench technology and
design to provide excellent R
with low gate charge. It
DS(ON)
can be used in a wide variety of applications.

GENERAL FEATUR*  V  =60V,I  =75A 
 < 11.5m @ V =10V  (T*:9.1m)

 High density cell design for ultra low Rdson  Fully characterized Avalanche voltage and current  Good stability and uniformity with high E
AS  Excellent package for good heat dissipation  Special process technology for high *D capability
 
Application
 
Marking and pin Assignment  Power switching application  Hard Switched and High Frequency Circuits  Uninterruptible Power Supply