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品牌/商标 | NCE(新洁能) | 型号/规格 | NCE3010S |
种类 | *缘栅(MOSFET) | 沟道类型 | N沟道 |
导电方式 | 增强型 | 封装外形 | SMD(SO)/表面封装 |
材料 | N-FET硅N沟道 | *大漏*电流 | 10000(mA) |
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D*CRIPTION
The NCE3010S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATUR*
● VDS =30V,ID =10A
RDS(ON) < 13.5mΩ @ VGS=10V
RDS(ON) < 20mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
●Power switching application
●Hard Switched and High Frequency Circuits
●Uninterruptible Power Supply