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DUAL ENHANCEMENT MODE
(N-CHANNEL/P-CHANNEL)
D*CRIPTION
The UT5003 can provide excellent RDS (ON) and low gate
charge by using UTC’s advanced trench technology. This device
is suitable for use as a load switch or in PWM applications.
FEATUR*
* N-Channel: 30V/7A
RDS(ON) = 27.5mΩ @ VGS =10V
RDS(ON) = 40mΩ @ VGS= 4.5V
* P-Channel: -30V/-5A
RDS(ON) = 45mΩ @ VGS= -10V
RDS(ON) = 80mΩ @ VGS= -4.5V
* Super high dense cell design
* Reliable and rugged
UTC(台湾友顺)
UT5003
*缘栅(MOSFET)
N沟道
耗尽型
L/功率放大
CHIP/小型片状
N-FET硅N沟道