*代理**低压MOS 场效应管UF830 SOT-23

4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
D*CRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching applications such as
switching regulators, switching converters, solenoid, motor drivers, relay
drivers.
FEATUR*
* 4.5A, 500V, RDS(ON)=1.5Ω
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance