三*管KSD880-Y

KSD880
Low Frequency Power Amplifier
• Complement to K*834

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted

Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
hFE Cl*ification
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current 3 A
IB Base Current 0.3 A
PC Collector Dissipation (TC=25°C) 30 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. T*. Max. Units
ICBO Collector Cut-off Current VCB = 60V, IE = 0 100 μA
IEBO Emitter Cut-off Current VEB = 7V, IC = 0 100 μA
BVCEO Collector-Emitter Breakdown Voltage IC = 50mA, IB = 0 60 V
hFE1
hFE2
DC Current Gain VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
60
20
300
VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.3A 0.4 1 V
VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 0.5A 0.7 1 V
fT Current Gain Bandwidth Product VCE = 5V, IC = 0.5A 3 MHz
Cob Output Capacitance VCB = 10V, IE = 0, f = 1MHz 70 pF
tON Turn ON Time VCC = 30V, IC = 1A
IB1 = - IB2 = 0.2A
RL = 30Ω
0.8 μs
tSTG Storage Time 1.5 μs
tF Fall Time 0.8 μs
Cl*ification                    O                  Y                      G
hFE1                          60 ~ 120      100 ~ 200        150 ~ 300