批发供应MJ11015汽车电子*管

 MJ11015汽车电子*管

. . . for use as output devices in complementary general purpose amplifier applications.
• High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc
• Monolithic Construction with Built–in Base Emitter Shunt Resistor
• Junction Temperature to +200 C

MAXIMUM RATINGS    Rating   Symbol
MJ11012
MJ11013
MJ11014
MJ11015
MJ11016
Unit
Collector–Emitter Voltage
VCEO
60
90
120
Vdc
Collector–Base Voltage
VCB
60
90
120
Vdc
Emitter–Base Voltage
ÎÎÎ
VEB
5
Vdc
Collector Current
IC
30
AdcBase Current
IB
1
Adc
Total Device Dissipation @TC = 25 C
Derate above 25 C @ TC = 100 C
PD
200
1.15
Watts
W/ C
Operating Storage Junction
Temperature Range
TJ, Tstg
–55 to +200
C