三*管KSA940

KSA940
Vertical Deflection Output Power Amplifier
• Complement to KSC2073

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol Parameter Ratings Units
VCBO Collector-Base Voltage - 150 V
VCEO Collector-Emitter Voltage - 150 V
VEBO Emitter-Base Voltage - 5 V
IC Collector Current - 1.5 A
IB Base Current - 0.5 A
PC Collector Dissipation (Ta=25°C) 1.5 W
PC Collector Dissipation (TC=25°C) 25 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. T*. Max. Units
ICBO Collector Cut-off Current VCB = - 120V, IE = 0 - 10 μA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 μA
hFE DC Current Gain VCE = - 10V, IC = - 500mA
VCE (sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA - 1.5 V
VBE(on) Base-Emitter ON Voltage VCE = - 10V, IC = - 500mA - 0.65 - 0.75 - 0.85 V
fT Current Gain Bandwidth Product VCE = - 10V, IC = - 500mA 4 MHz
Cob Output Capacitance VCB = - 10V, IE = 0
f = 1MHz
55
pF