无锡固电ISC供应2SD1632三*管

SY*OL

PARAMETER

VALUE

UNIT

V_CBO

Collector- Base Voltage                        

1500

V

V_C*

Collector-Emitter Voltage                        

1500

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

4

A

I_CM

Collector Current-Peak

15

A

I_BM

Base Current-Peak

3.5

A

P_C

Collector Power Dissipation

@ T_C=25℃

70

W

T_J

JunctionTemperature

130

℃

T_stg

StorageTemperature Range

-55~130

℃

SY*OL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 500mA; I_C= 0

5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 3A; I_B= 1A

1.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 3A; I_B= 1A

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 750V; I_E= 0

V_CB= 1500V; I_E= 0

50

1.0

μA

mA

h_FE

DC Current Gain

I_C= 3A; V_CE= 10V

5

15

V_ECF

C-E Diode Forward Voltage

I_F= 4A

2.2

V

Switching times

t_stg

Storage Time

I_C= 3A; I_B(end)= 1A; L_leak= 5μH

9.0

μs

t_f

Fall Time

0.8

μs