供应Switching N-channel Power Mos场效应管 2sk3918

FEATURES
• Low on-state resistance
RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 24 A)
• Low Ciss: Ciss = 1300 pF TYP.
• 5 V drive available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS 25 V
Gate to Source Voltage (VDS = 0 V) VGSS ±20 V
Drain Current (DC) (TC = 25°C) ID(DC) ±48 A
Drain Current (pulse) Note1 ID(pulse) ±192 A
Total Power Dissipation (TC = 25°C) PT1 29 W
Total Power Dissipation PT2 1.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current Note2 IAS 22 A
Single Avalanche Energy Note2 EAS 48 mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 12.5 V, RG = 25 Ω, VGS = 20 → 0 V