MOS管 FCP190N60 ON原厂渠道全新原装

FCP190N60 原装 FCP190N60 正品 FCP190N60 ON专营

FCP190N60E

参数信息制造商:ON Semiconductor

产品种类:MOSFET

RoHS:是

技术:Si

安装风格:Through Hole

封装 / 箱体:TO-220-3

通道数量:1 Channel

晶体管极性:N-Channel

Vds-漏源极击穿电压:600 V

Id-连续漏极电流:20.6 A

Rds On-漏源导通电阻:190 mOhms

Qg-栅极电荷:63 nC

最小工作温度:- 55 C

最大工作温度:+ 150 C

Pd-功率耗散:208 W

配置:Single

商标名:SuperFET II

封装:Tube

高度:16.3 mm

长度:10.67 mm

系列:FCP190N60E

晶体管类型:1 N-Channel

类型:600 V N-Channel MOSFET

宽度:4.7 mm

商标:ON Semiconductor / Fairchild

下降时间:15 ns

产品类型:MOSFET

上升时间:14 ns

工厂包装数量:800

子类别:MOSFETs

典型关闭延迟时间:101 ns

典型接通延迟时间:23 ns

FCP190N6O I FCPF190N6ON-Channel SuperFET ll MOSFET600 V, 20.2 A, 199 mQ2

Features

. 650V @ Tj= 150C· Typ. Ros(on)= 170 m2?

. Ultra Low Gate Charge (Typ. Qg= 57 nC)

· Low Efetive Output Capacitance (Typ. osqem.)= 160 pF)· 100% Avalanche Tested. RoHS CompliantApplications

. LCD/LED/PDP TV Lighting. Solar Inverter

· AC-DC Power Supply

Description

     SuperFET Il MOSFET is Fairchild Semiconductor's brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge perfomance. This technology is tailoredto minimize conduction loss, provide superior switching perfor-mance, dvidt rate and higher avalanche energy. Consequently,SuperFET ll MOSFET is very suitable for the switching powerapplications such as PFC, server/telecom power, FPD TVpower, ATX power and industrial power applications.