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6.6A,800V
N-CHANNEL MOSFET
1.Description
The KIA7N80H N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,solenoid,motor drivers,relay drivers.
2. Features
RDS(on)=1.9Ω @ VGS=10V
Low gate charge ( typical 27nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
KIA
KIA7N80
绝缘栅(MOSFET)
N沟道
耗尽型
A/宽频带放大
CER-DIP/陶瓷直插
GaAS-FET砷化镓