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FQP8N80C/FQPF8N80C800V N-Channel MOSFETGeneral DescriptionThese N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe, DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide *ior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supplies.Features•8A, 800V, RDS(on) = 1.55??1??76??1??78 @VGS = 10 V•Low gate charge ( t*ical 35 nC)•Low Crss ( t*ical 13 pF)•Fast switching•100% avalanche tested•Improved dv/dt capability
Federick美国
FQPF8N80C
*缘栅(MOSFET)
N沟道
增强型
L/功率放大
P-DIT/塑料双列直插
IGBT*缘栅比*