STF2HNK60Z

地区:广东 深圳
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深圳市众翔辉电子科技有限公司

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N-CHANNEL600V-4.4??1??76??1??78 -2.0ATO-92/TO-220FP/IPAKZener-ProtectedSuperM*H™MOSFET TYPICALRDS(on)=4.4??1??76??1??78 EXTREMELYHIGHdv/dtCAPABILITY *DIMPROVEDCAPABILITY 100%*ALANCHET*TED NEWHIGHVOLTAGEBENCHMARK GATECHARGEMINIMIZEDD*CRIPTIONTheSuperM*H™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerM*H™layout.Inaddition*ushingon-resistancesignificantlydown,specialcareistak-entoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchseriescomple-mentsSTfullrangeofhighvoltageMOSFETsin-cludingrevolutionaryMDmesh™products.APPLICATIONS ACADAPTORSANDBATTERYCHARGERS SWITHMODEPOWERSUPPLI*(SMPS)ORDERCOD*TYPEVDSSRDS(on)IDPWSTQ2HNK60ZR-APSTD2HNK60Z-1STF2HNK60Z600V600V600V<4.8??1??76??1??78<4.8??1??76??1??78<4.8??1??76??1??780.5A2.0A2.0A3W45W20W

品牌/商标

ST/意法

型号/规格

STF2HNK60Z

种类

*缘栅(MOSFET)

沟道类型

N沟道

导电方式

增强型

用途

L/功率放大

封装外形

P-DIT/塑料双列直插

材料

N-FET硅N沟道