*童，FQPF8N80C

FQP8N80C/FQPF8N80C
800V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide *ior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 8A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
• Low gate charge ( t*ical 35 nC)
• Low Crss ( t*ical 13 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings TC = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol Parameter FQP8N80C FQPF8N80C Units
VDSS Drain-Source Voltage 800 V
ID Drain Current - Continuous (TC = 25°C) 8 8 * A
- Continuous (TC = 100°C) 5.1 5.1 * A
IDM Drain Current - Pulsed (Note 1) 32 32 * A
VGSS Gate-Source Voltage &plu*n; 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ
IAR Avalanche Current (Note 1) 8 A
EAR Repetitive Avalanche Energy (Note 1) 17.8 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C) 178 59 W
- Derate above 25°C 1.43 0.48 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to 150 °C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter FQP8N80C FQPF8N80C Units
RθJC Thermal Resistance, Junction-to-Case 0.7 2.1 °C/W
RθJS Thermal Resistance, Case-to-Sink T*. 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
TO-220
G D S FQP Series
TO-220F
FQPF Series
G D S
●
●
●
▲
!
!
!
?
S
D
G