MOS管，STF2HNK60ZFP

TYPICAL RDS(on) = 4.4Ω
EXTREMELY HIGH dv/dt CAPABILITY
*D IMPROVED CAPABILITY
100% *ALANCHE T*TED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
D*CRIPTION
The SuperM*H™ series is obtained through an
extreme optimization of ST’s well established stripbased
PowerM*H™ layout. In addition to pushing
on-resistance significantly down, special care is taken
to ensure a very good dv/dt capability for the
most demanding applications. Such series complements
ST full range of high voltage MOSFETs including
revolutionary MDmesh™ products.