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Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250
?A
20
V
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 ?A
0.5 1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ?8 V
?100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 16
V, VGS = 0 V
50
Zero
Gate
Voltage
Drain
Current
IDSS
VDS =16
V, VGS = 0 V, TJ = 55?C
On-State Drain Currenta
ID(on)
VDS
? 5 V, VGS = 4.5 V
6
A
On-State
Drain
Currenta
ID(on)
VDS
? 5 V, VGS = 2.5 V
4
A
Drain-Source On-Resistancea
rDS(on)
VGS = 4.5 V, ID = 3.0 A
0.060
0.065
?
Drain-Source
On-Resistancea
rDS(on)
VGS = 2.5 V, ID = 2.0 A
0.085
0.090
?
Forward Transconductancea
gfs
VDS = 5 V,
ID = 3.0 A
10
S
Diode Forward Voltage
VSD
IS = 1.0 A, VGS = 0 V
1.28
V
Dynamic
Total Gate Charge
Qg
V
10 V V
4 5 V I
3 6 A
5.4
10
C
Gate-Source Charge
Qgs
VDS = 10 V, VGS = 4.5 V, ID = 3.6 A
0.65
nC
Gate-Drain Charge
Qgd
1.60
Input Capacitance
Ciss
V
10 V V
0 V f
1 MH
340
F
Output Capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
115
pF
Reverse Transfer Capacitance
Crss
33
Switching
Turn-On Delay Time
td(on)
V
10 V R
5 5 ?
12
25
Rise Time
tr
VDD
= 10 V, RL = 5.5 ?
I
3 6 A V
4 5 V R
6 ?
36
60
ns
Turn-Off Delay Time
td(off)
DD
,
L
ID
? 3.6 A, VGEN = 4.5 V, RG = 6 ?
34
60
ns
Fall-Time
tf
10
25
Notes
a.
Pulse test: PW ?300 ?s duty cycle ?2%..
VNLR02
