IRFP450A 500V HEXFET MOSFET

IRFP450APBF IRFP450APBF IRFP450APBF IRFP450APBF

安装风格:Through Hole

封装 / 箱体:TO-247-3

通道数量:1 Channel

晶体管极性:N-Channel

Vds-漏源极击穿电压:500 V

Id-连续漏极电流:14 ARds 

On-漏源导通电阻:400 mOhms

Vgs th-栅源极阈值电压:2 V

Vgs - 栅极-源极电压:10 V

Qg-栅极电荷:64 nC

最小工作温度:- 55 C

最大工作温度:+ 150 C

Pd-功率耗散:190 W

配置:Single

通道模式:Enhancement

封装:Tube

系列:IRFP 

晶体管类型:1 N-Channel 

商标:Vishay / Siliconix 

正向跨导 - 最小值:7.8 S 

下降时间:29 ns 

产品类型:MOSFET 

上升时间:36 ns 

工厂包装数量:500 

子类别:MOSFETs 

典型关闭延迟时间:35 ns 

典型接通延迟时间:15 ns 

单位重量:38 g

FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and

Avalanche Voltage and Current

• Effective Coss Specified

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge, Full Bridge

• PFC Boost

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 7.8 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).

c. ISD ≤ 14 A, dI/dt ≤ 130 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.