供应MMBT5551L高压晶体管 600mA 160V NPN

型号：MMBT5551LT1G
制造商：ON
类别：分离式半导体产品
家庭：晶体管(BJT) - 单路
系列：-
晶体管类型：NPN
电流 - 集电极 (Ic)（最大）：600mA
电压 - 集电极发射极击穿（最大）：160V
Ib、Ic条件下的Vce饱和度（最大）：200mV @ 5mA，50mA
电流 - 集电极截止（最大）：100nA
在某 Ic、Vce 时的最小直流电流增益 (hFE)：80 @ 10mA，5V
功率 - 最大：225mW
频率 - 转换：-
安装类型：表面贴装
封装/外壳：TO-236-3，SC-59，SOT-23-3
供应商设备封装：SOT-23-3（TO-236）
包装：带卷 (TR)
标准包装：3,000

MMBT5550L, MMBT5551L

High Voltage Transistors

NPN Silicon

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MMBT5550L, MMBT5551L

MMBT5550L, MMBT5551L

MMBT5550L, MMBT5551L 

For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

MAR