图文详情
产品属性
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Features
■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors
Applications
■ General purpose linear and switching
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Symbol Parameter Value Unit
NPN TIP120 TIP121 TIP122
PNP TIP125 TIP126 TIP127
VCBO Collector-base voltage (IE = 0) 60 80 100 V
VCEO Collector-emitter voltage (IB = 0) 60 80 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
IC Collector current 5 A
ICM Collector peak current 8 A
IB Base current 0.12 APTOT
Total dissipation at Tc ≤ 25 °C
Tamb ≤ 25 °C652W
Tstg Storage temperature -65 to 150 °C
TJ Max. operating junction temperature 150
TIP122
TIP122
ST(意法半导体)
TO-220
无铅环保型
直插式
散装
大功率
高频
NPN型