供应MJE802G 达林顿晶体管 4A 80V NPN

MJE700G, MJE702G,

MJE703G (PNP), MJE800G,

MJE802G, MJE803G (NPN)

Plastic Darlington

Complementary Silicon

Power Transistors

These devices are designed for general−purpose amplifier and

low−speed switching applications.

Features

• High DC Current Gain − hFE = 2000 (Typ) @ IC

= 2.0 Adc

• Monolithic Construction with Built−in Base−Emitter Resistors to

Limit Leakage − Multiplication

• Choice of Packages − MJE700 and MJE800 Series

• These Devices are Pb−Free and are RoHS Compliant*

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.

MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN)